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ELECTRONIC STATES OF DIFFUSED GaAs/AlGaAs QUANTUM WIRES

M. Saraydarov1,* , V. Donchev1, K. Germanova1, K. Kirilov1

Affiliation

  1. Faculty of Physics, Sofia University, 5, blvd. J. Bourchier, Sofia-1164, Bulgaria

Abstract

The electronic states and optical transition energies in diffused V-shaped GaAs/AlGaAs quantum wires (QWRs) are studied by means of the envelope-function approximation. It is demonstrated that the energy spectrum and optical properties of QWRs can be essentially modified by diffusion, the modification being larger for thinner wires. Furthermore, diffusion is simulated in real V-shaped GaAs/AlGaAs QWRs used in photoconductiviy spectral measurements. From the comparison between the calculated and the experimentally obtained optical transition energies, an indication of the high interface quality of the samples is found..

Keywords

V–Shaped GaAs quantum wires, Electronic states, Interdiffusion, Interface quality.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

M. Saraydarov, V. Donchev, K. Germanova, K. Kirilov, ELECTRONIC STATES OF DIFFUSED GaAs/AlGaAs QUANTUM WIRES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 525-528 (2005)