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ELECTROOPTICAL PROPERTIES OF DC ELECTROLUMINESCENT ZnS:Mn,Cu POWDER PANELS WITH CHALCOGENIDE GLASS INTERMEDIATE LAYER

N. Mateleshko1, V. Mitsa1,* , S. Sikora1

Affiliation

  1. Uzhgorod State University, Department of Solid State Electronics, 32 Voloshin str., 88000 Uzhgorod, Ukraine

Abstract

Introducing of amorphous (a) a-As2Se3 as contrasting intermediate layer into SnO2-As2Se3-ZnS(Mn, Cu)-Al structure allows one to increase by about 50% a light contrast range of the device that facilitates the perception of symbol-alphabetic information. The bleaching of -As2Se3 film under the action of humidity allows one to control the state of the structure air-tightness. The absorption edge of As-Se films and electrooptical characteristics of SnO2-ZnS(Mn, Cu)-Al active structure have been investigated..

Keywords

Electroluminescence, Powder ZnS (Mn, Cu), Thick film, Chalcogenide glasses.

Submitted at: Oct. 8, 2003
Accepted at: March 15, 2004

Citation

N. Mateleshko, V. Mitsa, S. Sikora, ELECTROOPTICAL PROPERTIES OF DC ELECTROLUMINESCENT ZnS:Mn,Cu POWDER PANELS WITH CHALCOGENIDE GLASS INTERMEDIATE LAYER, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 1, pp. 329-332 (2004)