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Epitaxial-quality PZT: insulator or semiconductor?

L. PINTILIE1,* , M. LISCA1,2, M. ALEXEa1

Affiliation

  1. Max Planck Institute for Microstructure Physics, Weinberg 2, 06120, Halle, Germany
  2. National Institute of Materials Physics, Bucharest-Magurele, P.O. Box MG-7, 077125, Romania

Abstract

The lead zirconate-titanate (PZT) epitaxial thin films are analyzed as being p-type, wide-gap semiconductors with standard Schottky contacts. The results of the hysteresis, capacitance-voltage (C-V), and current-voltage (I-V) measurements are explained in the frame of the classical model for metal-semiconductor Schottky contacts, in which the effect of the ferroelectric polarization on band-bending was considered. The presence of the deep traps was also considered and their effect on the measured quantities was discussed. The free carrier concentration was estimated to about 3 × 1018 cm-3, with a remnant polarization of 40 µC/cm2, and with an effective density of the fixed charges in the depletion region of about 1.8 × 1019 cm-3..

Keywords

PZT, Semiconductor, Insulator, Deep traps, Polarization.

Submitted at: Oct. 14, 2005
Accepted at: Jan. 26, 2006

Citation

L. PINTILIE, M. LISCA, M. ALEXEa, Epitaxial-quality PZT: insulator or semiconductor?, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 1, pp. 7-12 (2006)