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EXPERIMENTS ON PULSED LASER DEPOSITION AND CHARACTERIZATION OF EPITAXIALLY IN-SITU GROWN YBa2Cu3O7-x THIN FILMS

M. Branescu1,* , V. S. Teodorescu1, G. Socol2, I. Balasz3, C. Ducu4, J. Jaklovszky1

Affiliation

  1. National Institute for R&D of Material Physics, P. O. Box MG-7, Bucharest, Romania
  2. National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG-36, Str. Atomistilor, Nr. 111, Bucharest, Romania
  3. "Babes Bolyai" University, Physics Department, Str. M. Kog lniceanu Nr. 1, Cluj Napoca, Romania
  4. University of Pitesti, Advanced Materials Department, Str. Targul din Vale Nr. 1, Pitesti, Romania

Abstract

Experimental results concerning the pulsed laser deposition parameters of in-situ epitaxially grown high crystalline quality YBa2Cu3O7-x thin films are reported. The structural and morphological properties of the deposited films analyzed by transmission electron microscopy, selected area electron diffraction, X-ray diffraction, and Raman spectroscopy are also presented. The YBa2Cu3O7-x thin films, predominantly c-axis oriented had required the smallest oxygen pressure during the cool-down time reported to date..

Keywords

Pulsed laser deposition, YBa2Cu3O7-x films.

Submitted at: May 24, 2004
Accepted at: March 23, 2005

Citation

M. Branescu, V. S. Teodorescu, G. Socol, I. Balasz, C. Ducu, J. Jaklovszky, EXPERIMENTS ON PULSED LASER DEPOSITION AND CHARACTERIZATION OF EPITAXIALLY IN-SITU GROWN YBa2Cu3O7-x THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 967-972 (2005)