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EXTRACTION OF TRAP-ASSISTED TUNNELING PARAMETERS BY GRAPHICAL METHOD IN THIN n-Si/SiO2 STRUCTURES

A. Gushterov1,* , S. Simeonov1

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria

Abstract

Trap-assisted tunneling in hydrogen implanted thin n—Si/SiO2 structures have been investigated. The distance between nearest traps and energy position in the energy gap of the deep levels, responsible for this mechanism, have been extracted by graphical calculations. These results have been compared to the data counted up by numerical calculations..

Keywords

Trap-assisted tunnelling mechanism, Inter trap distance, Barrier height.

Submitted at: April 12, 2005
Accepted at: May 26, 2005

Citation

A. Gushterov, S. Simeonov, EXTRACTION OF TRAP-ASSISTED TUNNELING PARAMETERS BY GRAPHICAL METHOD IN THIN n-Si/SiO2 STRUCTURES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1389-1393 (2005)