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FAST ELECTRON IRRADIATION EFFECTS ON MOS TRANSISTOR MICROSCOPIC PARAMETERS – EXPERIMENTAL DATA AND THEORETICAL MODELS

G. Stoenescu1, G. Iacobescu1,*

Affiliation

  1. Faculty of Physics, University of Craiova, Str. A. I. Cuza 13, 200585, Craiova, Romania

Abstract

In this paper the authors propose a general and a simplified theoretical model in order to study the output MOS transistor characteristics and to compute the microscopic (the electron mobility, the Fermi energy) and macroscopic (the saturation voltage and the changing of the drain channel length) parameters, after fast electron irradiation (3 MeV, 10 MRd) of the samples. Starting from the experimental data, we used these models and an appropriate optimization method, for computer simulation of the circuit characteristics and for finding the specific parameters of three MOSFET transistors with p-induced channel (ROS 01, ROS104, ROS 05), before and after irradiation..

Keywords

MOS transistor, Fast electron irradiation, Microscopic parameters, Optimization.

Submitted at: Feb. 7, 2005
Accepted at: May 26, 2005

Citation

G. Stoenescu, G. Iacobescu, FAST ELECTRON IRRADIATION EFFECTS ON MOS TRANSISTOR MICROSCOPIC PARAMETERS – EXPERIMENTAL DATA AND THEORETICAL MODELS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1629-1634 (2005)