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Fundamental absorption edge in thin films of Cd1-xMnxTe solid solutions

I. CARAMAN1, G. I. RUSU2,* , L. LEONTIE2

Affiliation

  1. Bacau University, 157 Calea Marasesti, 600115 Bacau, Romania
  2. ”Al.I. Cuza” University, 11 Carol I Boulevard, 700506 Iasi, Romania

Abstract

The absorption spectra in the domain of the fundamental absorption band of Cd1-xMnxTe solid solutions in thin films prepared by discrete (“flash”) evaporation of synthesized single crystals and by physical vapor deposition (using Cd0.5Mn0.5Te as source material) are investigated. The chemical composition of Cd1-xMnxTe films deposited by “flash” evaporation is close to CdTe, while by physical vapor deposition solid solutions with low Mn content result. The optical gap of Cd1-xMnxTe films prepared by discrete evaporation is equal to ∼2.0 eV and 2.13 eV at temperatures 293 K and 78 K, respectively..

Keywords

Cd1-xMnxTe, Single crystals, Thin films, Optical absorption.

Submitted at: March 15, 2006
Accepted at: May 18, 2006

Citation

I. CARAMAN, G. I. RUSU, L. LEONTIE, Fundamental absorption edge in thin films of Cd1-xMnxTe solid solutions, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 3, pp. 927-930 (2006)