"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

GLASS FORMATION ABILITY: IS THE RAWSON’S “LIQUIDUS TEMPERATURE EFFECT” ALWAYS EFFECTIVE?

V. S. Minaev1,* , S. P. Timoshenkov2, S. A. Oblozhko3, P. V. Rodionov3

Affiliation

  1. Elma Corp., Research Institute of Material Science and Technology, 124460, Moscow, Russia
  2. Moscow Institute of Electronics Engineering, 124498, Moscow, Russia
  3. Moscow Institute of Steel and Alloys, 117936, Moscow, Russia

Abstract

With the purpose of application of Sun’s and Rawson’s ideas for evaluation of glass formation in multi-component (and not only oxide) systems, the Sun-Rawson criterion (glass formation ability of oxide is equal to the ratio of the chemical bond energy to the melting temperature in Kelvin), has been modified by replacing the chemical energy with the total covalent-ion binding of the alloy and the melting temperature with the liquidus temperature (the Sun-Rawson-Minaev criterion). It has been shown that the Rawson’s “liquidus temperature effect” (increase of glass formation ability with decreasing of the liquidus temperature) in some ranges of phase diagrams of binary glass forming telluride systems As-Te, Ga-Te, Al-Te, which are characterized by “slow slope liquidus line” turned out to be ineffective due to stronger manifestation of the “covalent-ion binding effect” in such regions..

Keywords

Glass formation ability, Liquidus temperature, Chemical binding, Sun-Rawson-Minaev criterion.

Submitted at: April 27, 2004
Accepted at: June 22, 2004

Citation

V. S. Minaev, S. P. Timoshenkov, S. A. Oblozhko, P. V. Rodionov, GLASS FORMATION ABILITY: IS THE RAWSON’S “LIQUIDUS TEMPERATURE EFFECT” ALWAYS EFFECTIVE?, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 3, pp. 791-798 (2004)