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High efficiency In2O3/c-Si heterojunction solar cells produced by rapid thermal oxidation

R. A. ISMAIL1,* , D. N. RAOUF2, D. F. RAOUF2

Affiliation

  1. Faculty of Education-Hadhramout University Seiyun-Yemen,P.O.Box 9256 Seiyun, Yemen
  2. School of Applied Science –University of Technology/Baghdad-Iraq

Abstract

In this paper, Indium oxide (In2O3)/n-Si junction solar cells were prepared by novel rapid thermal oxidation (RTO) technique using halogen lamp at 300 ºC/25 sec condition at static air. The fabricated solar cells subjected to post-deposition annealing at 450 ºC/30 min and 450 ºC/35 min. High conversion efficiencies ranging between 11.5% and 14.5% at AM1 condition for unannealed an annealed cells respectively were obtained without using frontal grid contact. The photovoltaic properties of solar cells before and after annealing are characterized and analyzed. Furthermore, the stability conditions and reliability of these cells have been tested..

Keywords

In2O3, Solar cell, Heterojunctions, Rapid thermal oxidation.

Submitted at: April 28, 2006
Accepted at: July 20, 2006

Citation

R. A. ISMAIL, D. N. RAOUF, D. F. RAOUF, High efficiency In2O3/c-Si heterojunction solar cells produced by rapid thermal oxidation, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 4, pp. 1443-1446 (2006)