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HIGH FIELD CONDUCTION STUDIES IN a- Se80-XTe20SbX THIN FILMS IN DARK AS WELL AS IN PRESENCE OF LIGHT

V. S. Kushwaha1, A. Kumar1,*

Affiliation

  1. Department of Physics, Harcourt Butler Technological Institute, Kanpur-208 002, India

Abstract

Glassy alloys of Se80-xTe20Sbx (x = 0; 5) were prepared by the quenching technique. Amorphous thin films of these alloys are prepared by the vacuum evaporation technique. Current – voltage (I-V) characteristics have been studied at various temperatures in dark as well as in presence of light. For this purpose, a dc voltage (0 – 300 V) is applied across the film. I-V characteristics show that, at low electric fields, an ohmic behaviour is observed. However, at high electric fields (E ~ 104 V/cm), the current becomes super ohmic. Analysis of the data shows the absence of space charge limited currents in a- Se80-xTe20Sbx thin films as ln I/V vs V curves are not found to be straight lines with good correlation coefficient. Instead, ln I vs V1/2 curves are found to be straight lines having good correlation coefficient. The slope of these curves decreases with the increase in temperature. A more detailed analysis shows that the dominated mechanism of the conduction is of Poole - Frenkel type in dark as well as in presence of light..

Keywords

Chalcogenide glasses, High field conduction, Poole-Frenkel effect.

Submitted at: Nov. 17, 2004
Accepted at: Dec. 6, 2004

Citation

V. S. Kushwaha, A. Kumar, HIGH FIELD CONDUCTION STUDIES IN a- Se80-XTe20SbX THIN FILMS IN DARK AS WELL AS IN PRESENCE OF LIGHT, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 4, pp. 1159-1165 (2004)