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IMPACT OF INSTABILITY IN µc-Si:H i-LAYERS ON THE PERFORMANCE OF SOLAR CELLS

M. Sendova-Vassileva1,* , F. Finger2, S. Klein2, A. Lambertz2

Affiliation

  1. Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Forschungszentrum Jülich, Institut für Photovoltaik, D-52425 Jülich, Germany

Abstract

We investigate the instability phenomena in pin solar cells with a µc-Si:H i-layer deposited under conditions close to the transition to amorphous growth, resulting in compact material, and other cells containing a high crystalline volume fraction of material with a pronounced porosity. The cells were first annealed in vacuum at 160 °C and then treated in de-ionized water at 80 °C for different lengths of time, stored under ambient conditions and annealed again. We observed a strong degradation of the current-voltage (J-V) parameters after treatment in de-ionized water, for the cells with highly crystalline and porous i-layers, while cells with compact i-layer material show very little changes in their J-V parameters..

Keywords

Stability, Microcrystalline silicon, Solar cells, Current-voltage characteristics.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

M. Sendova-Vassileva, F. Finger, S. Klein, A. Lambertz, IMPACT OF INSTABILITY IN µc-Si:H i-LAYERS ON THE PERFORMANCE OF SOLAR CELLS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 481-484 (2005)