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Improving breakdown voltage in AlGaAs/GaAs HEMT by gate oxidation

W. C. CHANG1,* , T. C. CHENG1, K. F. YARN2

Affiliation

  1. Department of Electronic Engineering, Southern Taiwan University of Technology, Yung-Kang, Tainan, Taiwan 710, ROC
  2. Department of Electronic Engineering, Far East College, Hsin-Shih, Tainan, Taiwan 744, ROC

Abstract

A gate-to-drain breakdown voltage of 30 V has been improved to over 62V by liquid phase deposition (LPD) grown native oxides passivated on gate and sidewall positions in AlGaAs/GaAs high electron mobility transistor (HEMT). The transconductance and current density of a 1 x 100 m2 device at room temperature (77 K) are 245 (423) mS/mm and 29 (37) mA/mm, respectively. The measured cut-off frequency, fT, is up to 23 GHz. From experiments, it is found that an enhanced good linearity AlGaAs/GaAs HEMT by native oxides passivation have been successful fabricated and demonstrated in both dc and ac properties..

Keywords

Liquid phase deposition, HEMT, Gate oxidation.

Submitted at: Dec. 12, 2005
Accepted at: Jan. 26, 2006

Citation

W. C. CHANG, T. C. CHENG, K. F. YARN, Improving breakdown voltage in AlGaAs/GaAs HEMT by gate oxidation, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 1, pp. 329-332 (2006)