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Improving the wetting of oxides by metals

J. JUPILLE1,* , R. LAZZARI1

Affiliation

  1. Institut des Nanosciences de Paris (INSP), Universités Paris 6 et 7, UMR CNRS 7588, Campus de Boucicaut, 75015 PARIS

Abstract

On wide band gap oxides, metal atoms show a tendency to cluster in 3D particles. Since this appears to be unfavourable in many advanced technologies which involve metal/oxide interfaces, improving the wetting at these interfaces is a constant challenge. The present paper focuses on some important means that are stressed to strengthen the interfacial bonding, namely the hydroxylation of the oxide surfaces and the pre-deposition of a buffer. The analysis combines the examination of the interfacial metal/oxide chemistry by photoemission and the characterization of the wetting by UV-visible surface differential reflectivity. This technique is shown to be very appropriate for the in situ study of growing films..

Keywords

Interface metal/oxide, Wetting, X-ray photoemission spectroscopy, Surface differential reflectivity.

Submitted at: March 15, 2006
Accepted at: May 18, 2006

Citation

J. JUPILLE, R. LAZZARI, Improving the wetting of oxides by metals, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 3, pp. 901-908 (2006)