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INFLUENCE OF ILLUMINATION ON THE OPTICAL BANDGAP ENERGY VALUE OF GexSb20-xTe80 FILMS

V. Pamukchieva1,* , A. Szekeres1

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

The influence of light illumination on the optical bandgap energy Eg of chalcogenide thin films with GexSb20-xTe80 composition and thicknesses of ~1 mm has been studies by spectral ellipsomerty in the range of 300-820 nm. The studied compositions were chosen within the glass-forming region of the Ge-Sb-Te system. The films were illuminated with a 500 W HBO mercury lamp. Immediately after illumination the Eg values decrease suggesting a structural change in the films. The changes are not stable in time, which is reflected in a gradual increase of bandgap energies toward initial Eg values..

Keywords

Amorphous GeSbTe films, Vacuum evaporation, Spectral ellipsometry, Optical bandgap energy.

Submitted at: April 12, 2005
Accepted at: May 26, 2005

Citation

V. Pamukchieva, A. Szekeres, INFLUENCE OF ILLUMINATION ON THE OPTICAL BANDGAP ENERGY VALUE OF GexSb20-xTe80 FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1277-1280 (2005)