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INFRARED SPECTROSCOPY STUDY OF Si-SiO2 STRUCTURES IRRADIATED WITH HIGH-ENERGY ELECTRONS

I. P. Lisovskyy1, V. G. Litovchenko1, D. O. Mazunov1, S. Kaschievab2,* , J. Koprinarova2, S. N. Dmitriev3

Affiliation

  1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospect Nauky, 03028 Kiev-28, Ukraine
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Shaussee Blvd., 1784 Sofia, Bulgaria
  3. Joint Institute of Nuclear Research, 141980 Dubna, Russia

Abstract

Si-SiO2 structures, fabricated on n-type Si wafers by thermal oxidation in dry oxygen or in wet ambient, were studied by means of infrared transmission spectroscopy in the wavenumber range 800-1400 cm-1. Three series of samples were irradiated with 23 MeV electrons at a flux of about 1013 electrons cm-2 s-1 for different durations: 30, 120 and 7200 s. A Si substrate without an oxide film was used as a reference sample. It was demonstrated that as a result of high energy electron irradiation, the main absorption band shifts towards higher wavenumbers and the shape of the absorption band is changed. The absorption band peak position shifts monotonically with increasing electron irradiation dose. The shift depends on the oxide type, varying in the range 7-14 cm-1. This effect is most pronounced for samples with wet oxide. Analysis of the absorption band shape enabled us to conclude that the irradiation changes the contribution of 4 and 6-fold SiO4 tetrahedral rings into the oxide lattice..

Keywords

Si-SiO2 structures, Si-SiO2 interfaces, High energy electron irradiation, Infrared transmission spectroscopy.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

I. P. Lisovskyy, V. G. Litovchenko, D. O. Mazunov, S. Kaschievab, J. Koprinarova, S. N. Dmitriev, INFRARED SPECTROSCOPY STUDY OF Si-SiO2 STRUCTURES IRRADIATED WITH HIGH-ENERGY ELECTRONS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 325-328 (2005)