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INSTABILITY PHENOMENA IN MICROCRYSTALLINE SILICON FILMS

F. Finger1,* , R. Carius1, T. Dylla1, S. Klein1, S. Okur2, M. Günes2

Affiliation

  1. Institute of Photovoltaics, Forschungszentrum Jülich, 52425 Jülich, Germany
  2. Izmir Institute of Technology, Department of Physics, Urla, 35437 Izmir, Turkey

Abstract

Microcrystalline silicon (µc-Si:H) for solar cell applications is investigated with respect to the material stability upon treatment of the material in various environments, followed by annealing. The material can be separated into two groups: (i) material with high crystalline volume fractions and pronounced porosity which is susceptible to in-diffusion of atmospheric gases, which, through adsorption or oxidation affect the electronic properties and (ii) compact material with high or low crystalline volume fractions which show considerably less or no influence of treatment in atmospheric gases. We report the investigation of such effects on the stability of µc-Si:H films prepared by plasma enhanced chemical vapour deposition and hot wire chemical vapour deposition..

Keywords

Microcrystalline silicon, Instability, Electron Spin Resonance.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

F. Finger, R. Carius, T. Dylla, S. Klein, S. Okur, M. Günes, INSTABILITY PHENOMENA IN MICROCRYSTALLINE SILICON FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 83-90 (2005)