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INTER-TRAP TUNNELING IN HYDROGEN IMPLANTED n-Si/SiO2 STRUCTURES

S. Simeonov1, A. Gushterov1,*

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

Hydrogen ions with energy 800 eV and doses of 1013, 1014 and 1015 cm-2 have been implanted in n-Si/SiO2 structures with 150 nm thick SiO2 layers, prepared by dry oxidation at 850 ºC. The MOS structures were investigated with high frequency (1 MHz) capacitance voltage (C-V) and conductance-voltage (G-V) measurements, at 300 and 77 K. The fixed oxide charge density and trap energy density at the Si/SiO2 interface were determined, and analyzed from the C-V measurements. The trap densities in the SiO2 layers were estimated from the G-V measurements. In the accumulation mode, conduction in the structures does not depend on the temperature. Taking into account an inter-trap tunneling mechanism (electron tunneling via the nearest traps), the concentration and energy position of these traps in the SiO2 layers have been determined..

Keywords

Tunnelling current, Hydrogen implantation, MOS structures.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

S. Simeonov, A. Gushterov, INTER-TRAP TUNNELING IN HYDROGEN IMPLANTED n-Si/SiO2 STRUCTURES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 541-544 (2005)