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Investigation of solution-processed organic thin film transistors based on α,ω-hexyl-distyryl-bithiophene (DH-DS2T): growth and transport properties

Y. DIDANE1, A. K. DIALLO1, T. FIORIDO2, A. SUZUKI3, N. YOSHIMOTO3, S. BERNARDINI2, J. ACKERMANN1, F. FAGES1, H. BRISSET1, M. BENDAHAN2, K. AGUIR2, C. VIDELOT-ACKERMANN1,*

Affiliation

  1. Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS-UPR-3118, Aix Marseille Université, Campus Luminy, Case 913, 13288 Marseille Cedex 09, France
  2. Institut Matériaux, Microélectronique et Nanosciences de Provence (IM2NP), CNRS UMR 6242, Equipe Microcapteurs, Faculté des Sciences de St Jérôme, Service 152, 13397 Marseille Cedex 20
  3. Department of Materials Science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan

Abstract

We have studied drops of a semiconducting oligomer as active layer in organic thin film transistor (OTFT) devices. A small molecule, α, ω-hexyl-distyryl-bithiophene (DH-DS2T), was used as a hole transporting active layer. Structure and morphology of thin films have been studied by X-ray diffraction and optical microscopy. Depending of ink’s parameters (solvent, concentration), a comparative analysis of both electrical response and film crystallinity obtained under identical measurement conditions was realized..

Keywords

Organic semiconductors, Thin films, X-ray diffraction, Optical microscopy, Morphology, Transport.

Submitted at: March 18, 2010
Accepted at: July 14, 2010

Citation

Y. DIDANE, A. K. DIALLO, T. FIORIDO, A. SUZUKI, N. YOSHIMOTO, S. BERNARDINI, J. ACKERMANN, F. FAGES, H. BRISSET, M. BENDAHAN, K. AGUIR, C. VIDELOT-ACKERMANN, Investigation of solution-processed organic thin film transistors based on α,ω-hexyl-distyryl-bithiophene (DH-DS2T): growth and transport properties, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 7, pp. 1546-1551 (2010)