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ISING MODEL FOR EXCHANGE BIAS IN FERROMAGNETIC/ANTIFERROMAGNETIC BILAYERS

B. Negulescu1,* , R. Tanasa1, A. Stancu1

Affiliation

  1. Department of Electricity and Physical Electronics, Faculty of Physics, “Al. I. Cuza” Univ., 11 Blvd. Carol 1, 700506, Iasi, Romania

Abstract

We propose a Random Anisotropy Ising Model (RAIM) to describe exchange bias in a ferromagnetic(F)/antiferromagnetic(AF) system. The F and AF spins are arranged in a square lattice permitting to control the interface between the two layers. The AF film is quenched and exhibit negative exchange interactions, while interactions in the F film are positives. An anisotropy term is introduced in both layers. The influence of the AF spin arrangement at the interface on exchange bias field is analyzed for compensated, uncompensated or rough interfaces..

Keywords

Exchange bias, Ising model, Hysteresis, Ferromagnetic/antiferromagnetic bilayer.

Submitted at: April 21, 2004
Accepted at: June 22, 2004

Citation

B. Negulescu, R. Tanasa, A. Stancu, ISING MODEL FOR EXCHANGE BIAS IN FERROMAGNETIC/ANTIFERROMAGNETIC BILAYERS, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 3, pp. 991-994 (2004)