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LASER INDUCED PHOTORESIST THIN FILM REMOVAL FROM SILICON WAFER SURFACE

I. Apostol1,* , V. Damian1, A. Timcu1, I. Iordache1, M. Bianco2, R. Galli2, M.-C. Castex3

Affiliation

  1. National Institute for Laser, Plasma and Radiation Physics, Laser Department, PO Box MG 36, Bucharest-Magurele, RO77125, Romania
  2. RTM, Vico Canavese, Italy
  3. Dept. of Lasers and Applications, University Paris Nord 13, Paris, France

Abstract

Laser induced cleaning of silicon wafer covered with photoresist thin film was studied. We have used ultraviolet laser beams with wavelength 248 nm and 313 nm. Experimental results have evidenced that a good cleaning of the surface can be obtained with a proper choice of the irradiation conditions (intensity, number of pulses). The removal of the photoresist in the irradiated region was obtained for laser intensities of the order of 107 W/cm2 and multipulse laser irradiation. Also photoresist removal from the silicon surface can be obtained for one pulse or for a low number of laser pulses, but for incident intensity greater than the melting threshold of the silicon substrate. In this case the very accurate selection of the incident energy is more important to avoid substrate surface damage..

Keywords

Laser induced cleaning, Photoresist, Silicon wafer.

Submitted at: Feb. 4, 2004
Accepted at: June 10, 2004

Citation

I. Apostol, V. Damian, A. Timcu, I. Iordache, M. Bianco, R. Galli, M.-C. Castex, LASER INDUCED PHOTORESIST THIN FILM REMOVAL FROM SILICON WAFER SURFACE, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 2, pp. 481-484 (2004)