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LIGHT AND ION INDUCED INTERDIFFUSION IN AMORPHOUS CHALCOGENIDE NANOMULTILAYERS

I. Ivan1,* , D. L. Beke2, S. Kokenyesi3, I. A. Szabo2, A. Csik2,4

Affiliation

  1. Department of Experimental Physics, University of Debrecen, Bem ter 18/a, 4026 Debrecen, Hungary
  2. Department of Solid State Physics, University of Debrecen, 4010 Debrecen P. O. Box 2, Hungary
  3. Department of Experimental Physics, University of Debrecen, Bem ter 18/a, 4026 Debrecen, Hungary
  4. Institute of Nuclear Research, Hungarian Academy of Sciences (ATOMKI), H-4001 Debrecen, P. O. Box 51, Hungary

Abstract

Comparative investigations of light and ion irradiation induced intermixing have been performed in amorphous Se/As2S3 and As0.2Se0.8/As0.2S0.8 multilayer films with composition modulation period 6-6.5 nm. It was established that both light and ion irradiation induced interdiffusion is accompanied by optical bleaching and volume expansion of the film. Good correlation between the kinetics of intermixing, measured by low angle X-ray diffraction, and the kinetics of optical transmission changes was observed, which in turn allows an in situ tracking of the diffusion processes by optical measurements. The results and the possible mechanism of light and ion irradiation enhanced interdiffusion are discussed within the framework of thermal spike model..

Keywords

Amorphous multilayers, Interdiffusion, Irradiation, Radiation enhanced diffusion, Optical bleaching, Volume expansion.

Submitted at: May 30, 2005
Accepted at: July 21, 2005

Citation

I. Ivan, D. L. Beke, S. Kokenyesi, I. A. Szabo, A. Csik, LIGHT AND ION INDUCED INTERDIFFUSION IN AMORPHOUS CHALCOGENIDE NANOMULTILAYERS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1831-1836 (2005)