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LOW-TEMPERATURE LUMINESCENCE QUENCHING AND LOCAL ORDERING STUDY OF Er-DOPED Ge-S-Ga GLASSES

Z. G. Ivanova1,* , R. Ganesan2, K. V. Adarsh2, V. S. Vassilev3, Z. Aneva1, Z. Cernosek4, E. S. R. Gopal2

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Department of Physics, Indian Institute of Science, 560 012 Bangalore, India
  3. Department of Semiconductors, Chemical Technology and Metallurgy University, 8 Blvd. Kl. Ohridski, 1756 Sofia, Bulgaria
  4. Institute of General and Inorganic Chemistry, University of Pardubice, 565 nam. Legii, 532 09 Pardubice, Czech Republic

Abstract

Photoluminescence (PL) spectroscopy by excitation with 514.5 nm light at 4.2 and 77 K is applied to (GeS2)80(Ga2S3)20: x mol % Er2S3 (x=0.3, 0.6, 0.9, 1.8, 2.1 and 2.4) glasses. The compositional dependence of the PL intensity is determined, and a quenching effect accompanied by the strongest absorption at 1.22 at % Er is established. The influence of temperature on the emission cross-section is investigated by deconvolution of the experimental spectra, and the observed fine features are explained on the basis of the energy level diagram of Er3+ ions. The distribution and changes of the structural units at higher Er concentrations are specified by Raman scattering, in the range 50-550 cm-1..

Keywords

Chalcogenide glasses, Er-doping, Low-temperature luminescence, Ge-S-Ga glass.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

Z. G. Ivanova, R. Ganesan, K. V. Adarsh, V. S. Vassilev, Z. Aneva, Z. Cernosek, E. S. R. Gopal, LOW-TEMPERATURE LUMINESCENCE QUENCHING AND LOCAL ORDERING STUDY OF Er-DOPED Ge-S-Ga GLASSES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 345-348 (2005)