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LOW-TEMPERATURE STEADY-STATE PHOTOCONDUCTIVITY IN AMORPHOUS SELENIUM FILMS

N. Qamhieh1, M. L. Benkhedir2, M. Brinza2,* , G. J. Adriaenssens2

Affiliation

  1. Department of Physics, U.A.E. University, P.O. Box 17551, Al Ain, United Arab Emirates
  2. Halfgeleiderfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium

Abstract

Steady-state photocurrents are measured in amorphous selenium (a-Se) films as function of illumination intensity for temperatures between 210 K and 297 K. The Lux-Ampère characteristic, Iph Gg, shows a maximum exponent of 1.08 – 0.06 around 250 K while lower values are measured at room temperature and 210 K. The photocurrent overshoots its steady-state value upon initial turn-on of a high light intensity by an amount that has a minimum in the 250 K region. Both phenomena indicate the presence of a deep electron trap near the a-Se equilibrium Fermi level..

Keywords

Selenium, Photoconductivity, Lux-Ampère characteristic.

Submitted at: May 19, 2005
Accepted at: July 21, 2005

Citation

N. Qamhieh, M. L. Benkhedir, M. Brinza, G. J. Adriaenssens, LOW-TEMPERATURE STEADY-STATE PHOTOCONDUCTIVITY IN AMORPHOUS SELENIUM FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1781-1784 (2005)