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MAGNETIC PROPERTIES OF THIN FILM AMR SENSOR STRUCTURES IMPLEMENTED BY MAGNETIZATION AFTER ANNEALING

S. Andreev1,* , J. Koprinarova1, P. Dimitrova1

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

Magnetoresistive sensors based on the anisotropic magnetoresistance effect (AMR) are widely used for measuring magnetic fields, and in compasses, angle/position sensors and current sensors. In spite of the later appearance of GMR structures, AMR sensors are still preferred in many fields because of their higher sensitivity and flexible technology. In this work the capacity for the production of high-quality devices is investigated for a technology flow based on magnetization of the AMR layer after annealing. The produced devices are single-stripe resistors on oxidized silicon wafers and on ceramic substrates. They demonstrate an AMR effect near to the theoretical value for the material. Two versions of AMR bridges are fabricated and investigated – with and without a barber pole structure. They exhibit comparable characteristics to those of devices manufactured by world recognised producers. The technology used is compatible with conventional CMOS processes, thus allowing the integration of AMR sensors with control ASICs on one chip, in order to obtain multifunctional smart systems..

Keywords

AMR, Thin films, Magnetic sensors.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

S. Andreev, J. Koprinarova, P. Dimitrova, MAGNETIC PROPERTIES OF THIN FILM AMR SENSOR STRUCTURES IMPLEMENTED BY MAGNETIZATION AFTER ANNEALING, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 317-320 (2005)