"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Materials and structures for semiconductor spintronics

V. G. KANTSER1,*

Affiliation

  1. International Laboratory of Superconductivity and Solid State Electronics of the Academy of Sciences of Moldova Rep Academiei str., 5, Chisinau, MD 2028, Moldova Rep.

Abstract

The objective of this paper is to present a review of the recent results concerning the new concepts and achievements in the area of semiconductor spintronics, which has greatly emerged last years. Development of this field of semiconductor and magnetic physics is largely determined by the progress in synthesis of new materials and low dimensional structures, which are inherent to obtain functional spintronic devices. Some recent approaches for materials and structure development in the area of spin polarized carrier states and flow formation as we l as spin injection is highlighted. In particular, the spintronics rout of II-VI, III-V and IV-VI ferromagnetic semiconductor compounds and structures is analyzed. Several methods and structures for spin manipulation and for testing spin parameters of carriers are presented underlying the role of spin-orbital interaction. The novel spintronics phenomenon - Spin Hal Effect (SHE) - is reviewed. New peculiarities of SHE, induced by interband interaction of heavy and light holes through optical like displacements, are studied in p-doped semiconductors..

Keywords

Spintronics, Semiconductor heterostructures, Magnetic materials, Spin-orbit interaction, Spin hall effect.

Submitted at: Jan. 18, 2006
Accepted at: March 23, 2006

Citation

V. G. KANTSER, Materials and structures for semiconductor spintronics, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 425-438 (2006)