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Metal-insulator transition induced by oxygen in nanoscale Bi:2201 thin films and in bulk Y:123 superconductiong materials

A. V. POP1,* , G. ILONCA1, M. POP2

Affiliation

  1. Faculty of Physics, University Babes-Bolyai, 400084 Cluj-Napoca, Romania
  2. Department of Material Processing Engineering, Technical University, 400084 Cluj-Napoca

Abstract

The bulk underdoped YBa2(Cu0.96 Fe0.04)3Oy superconducting system has been synthesized and investigated. The effect of oxygen content and the thermal treatment (fast quenching of underdoped samples from 250 K to 4.5K) on the electrical resistance were studied. Bi:2201 nanoscale thin films were deposited onto SiTiO3 and MgO substrates by using DC magnetron sputtering. The effect of different oxygen pressure (fO2) in the sputtering gas and the nature of the substrate on the electrical resistivity of thin films are presented. For both systems, in the lower temperature range, the underdoped samples show a ln(1/T) behavior of electrical resistance. The origin of this behavior is discussed..

Keywords

Superconductors, Bulk and thin films, Resistivity, Electronic transport.

Submitted at: Jan. 18, 2006
Accepted at: March 23, 2006

Citation

A. V. POP, G. ILONCA, M. POP, Metal-insulator transition induced by oxygen in nanoscale Bi:2201 thin films and in bulk Y:123 superconductiong materials, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 480-483 (2006)