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METHOD TO MANUFACTURE THE THERMOLUMINESCENT DETECTOR CHIPS USING LiF CRYSTAL

A. I. Stochioiu1,* , F. Scarlat2,3, I. I. Georgescu4, F. Alexiu5

Affiliation

  1. National Institute for Physics and Nuclear Engineering "Horia Hulubei" (IFIN-HH), Bucharest, Romania
  2. Department of Physics, Faculty of Sciences, Valahia University of Targoviste, Romania
  3. National Institute for Laser, Plasma and Radiation Physics (NILPRP), Bucharest, Romania
  4. University “Politehnica”, Bucharest, Romania
  5. Institute of Endocrinology “C. I. Parhon”, Bucharest, Romania

Abstract

The paper presents two methods to grow the LiF single crystal impurified with Mg and Ti, used to manufacture the TL detectors in the form of chips, in IFIN-HH. The comparative analysis of the methods have shown that the chips obtained by Czochralschi (Cz) method have a homogeneity that corresponds to the parameters required by the standards in force, IEC 1066 - Thermoluminescence Dosimetry System for Personal and Environmental Monitoring, 1991, for a much larger number of detectors in a lot (as e.g. the detectors obtained by Bridgman method), and, consequently, they can be used in personnel dosimetry. LiF: Mg, Ti, Tl detectors (chips) are aimed to measure the echivalent absorbed dose in the range of 5 10-5 - 10 Sv, generated by ionizing radiation having the energy between 15 keV and 3 MeV. The document also presents the parameters and characteristics of the detectors produced in IFIN-HH, irradiated and tested with a 60Co source (D = 3 Ci), 137Cs (D = 30 mCi) and at the 7 MeV electron linear accelerator in NILPRP..

Keywords

Radiation detectors, TL dosimetry, Crystal growth.

Submitted at: June 2, 2004
Accepted at: Dec. 6, 2004

Citation

A. I. Stochioiu, F. Scarlat, I. I. Georgescu, F. Alexiu, METHOD TO MANUFACTURE THE THERMOLUMINESCENT DETECTOR CHIPS USING LiF CRYSTAL, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 4, pp. 1357-1363 (2004)