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MICROWAVE DIELECTRIC PROPERTIES AND DOPING MECHANISMS OF La-DOPED Ba0.8Sr0.2TiO3

Ling Dong1,* , Xu Guo-Yue1, Cai Shao2

Affiliation

  1. College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  2. School of Electronic & Information Engineering ,Chongqing University of Science and Technology,Chongqing 400042)

Abstract

The microwave dielectric properties of La doped Ba0.8Sr0.2TiO3(BST in abbreviation) and their doping mechanisms were studied. BST ceramics could be densified at a sintering temperature of 1300 oC via a sol-gel method. Different amounts of La(NO3)3 doped BST ceramics were prepared. When doped small amount of La(NO3)3, no second phase was detected, La act as a donor dopant. Meanwhile oxygen vacancy was compensated. When increasing amount of La(NO3)3 was added, a hexagonal La4Ba4Ti7O24 phase was detected, and the electronic donor-doping mechanism was replaced by an ionic compensation mechanism. For BST ceramic with 0.2mol% La(NO3)3 sintered at 1280 oC,the r, Q׃ value and f were 176 ,4148GHz and 63ppm/ oC,respectively..

Keywords

Electronic technique, Ba0.8Sr0.2TiO3, Microwave dielectric ceramics, La-doping.

Submitted at: July 19, 2005
Accepted at: Sept. 22, 2005

Citation

Ling Dong, Xu Guo-Yue, Cai Shao, MICROWAVE DIELECTRIC PROPERTIES AND DOPING MECHANISMS OF La-DOPED Ba0.8Sr0.2TiO3, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 5, pp. 2737-2742 (2005)