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MICROWAVE DIELECTRIC PROPERTIES OF DOPED Ba0.5Sr0.5TiO3 CERAMICS CORRELATED WITH SINTERING TEMPERATURE

A. Ioachim1,* , M. G. Banciu1, L. Nedelcu1

Affiliation

  1. National Institute for Materials Physics, Str. Atomistilor no.105 bis, P. O. Box MG - 7, RO - 077125, Bucharest-Magurele, Romania

Abstract

Ba0.5Sr0.5TiO3 ferroelectric ceramics (BST) were prepared by solid-state reaction. The effect of sintering temperature Ts on microwave dielectric properties was studied. Also, the influence of 1 wt % MgO and 1 wt % MnO2 doping on the dielectric parameters was investigated. The morphological aspects of samples were studied by scanning electron microscopy (SEM). The microwave measurements at room temperature revealed dielectric constant around 1.000 and loss smaller than 1% at 1.1 GHz. Also, the dielectric parameters at low frequency were determined. The results indicate that the BST dielectric ceramics are suitable for manufacturing electric field controlled components such as tunable resonators, phase shifters, steerable antennas etc..

Keywords

Barium strontium titanate, Paraelectric state, Doped ceramics, Sintering temperature, Microwaves.

Submitted at: Oct. 5, 2005
Accepted at: Nov. 24, 2005

Citation

A. Ioachim, M. G. Banciu, L. Nedelcu, MICROWAVE DIELECTRIC PROPERTIES OF DOPED Ba0.5Sr0.5TiO3 CERAMICS CORRELATED WITH SINTERING TEMPERATURE, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 6, pp. 3023-3027 (2005)