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MINORITY CARRIER PROPERTIES OF MICROCRYSTALLINE SILICON THIN FILMS GROWN BY HW-CVD AND VHF-PECVD TECHNIQUES

S. Okur1,* , O. Göktas1, M. Günes1, F. Finger2, R. Carius2

Affiliation

  1. Department of Physics, Izmir Institute of Technology, Gülbahçe Kampus 35430 Urla-Izmir, Turkey
  2. Institut für Photovoltaik, Forschungszentrum Jülich, GmbH, 52425 Jülich, Germany

Abstract

Opto-electronic properties of µc-Si:H films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) and very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) techniques with various silane concentrations (SC) have been investigated using Raman spectroscopy, the steady-state photocarrier grating technique (SSPG), and the steady-state photoconductivity (SSPC). A correlation between the minority carrier transport properties and the microstructure has been found, using the dependence of the diffusion length (Ld) on the SC and Raman intensity ratio (IC RS) representing crystalline volume fractions. Ic RS changes from 0.22 to 0.77. Ld increases with increasing Ic RS. It peaks around 0.5 with a maximum value of 270 nm, then decreases. Similar dependences of Ld on Ic RS were obtained for films prepared by both HWCVD and VHF-PECVD. However, the grating quality factor measured on highly crystalline HWCVD films is substantially smaller than that found for VHF-PECVD films, indicating a relatively higher surface roughness present in the highly crystalline HWCVD films..

Keywords

Raman spectroscopy, Microcrystalline silicon thin film, Diffusion length, Steady state photocarrier grating technique.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

S. Okur, O. Göktas, M. Günes, F. Finger, R. Carius, MINORITY CARRIER PROPERTIES OF MICROCRYSTALLINE SILICON THIN FILMS GROWN BY HW-CVD AND VHF-PECVD TECHNIQUES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 491-494 (2005)