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MOBILITY-LIFETIME PRODUCTS IN MICROCRYSTALLINE SILICON

R. Brüggemann1,*

Affiliation

  1. Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, Germany

Abstract

Experimental values for mobility-lifetime products in microcrystalline silicon are examined. The minority-carrier mobility lifetime product is put in relation with sub-gap absorption. Instabilities reported for the dark conductivity in microcrystalline silicon also affect the photoconductivity values. Comparison between samples is difficult because of the possible influence of thermal history on the photoconductivity or majority carrier mobility lifetime product. We also comment on the use of mobility-lifetime products to linking excess carrier properties to the Fermi energy in microcrystalline silicon..

Keywords

Photoconductivity, Mobility-lifetime product, Silicon.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

R. Brüggemann, MOBILITY-LIFETIME PRODUCTS IN MICROCRYSTALLINE SILICON, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 495-498 (2005)