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MÖSSBAUER STUDY OF THE DEGREE OF DISORDER IN AMORPHOUS Ge-Sb- S

E. Skordeva1,* , P. E. Lippens2, J. C. Jumas2, J. Olivier-Fourcade2, V. Pamukchieva1

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. LAMMI CNRS UMR5072, Université Montpellier II, Place E. Bataillon, CC015, F-34095 Montpellier Cedex 5, France

Abstract

The local electronic structure of Ge-Sb-S glasses and films has been studied by means of 121Sb Mössbauer spectroscopy. The films were treated by bandgap illumination and/or annealing. Differences between the Mössbauer parameters in states with different degree of disorder were checked and are discussed..

Keywords

Mössbauer spectroscopy, Amorphous Ge-Sb-S, Thin films.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

E. Skordeva, P. E. Lippens, J. C. Jumas, J. Olivier-Fourcade, V. Pamukchieva, MÖSSBAUER STUDY OF THE DEGREE OF DISORDER IN AMORPHOUS Ge-Sb- S, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 565-568 (2005)