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I agree, do not show this message again.NANO-SCALE PHASE CHANGES IN Ge-Sb-Te FILMS WITH ELECTRICAL SCANNING PROBE MICROSCOPES
K. Tanaka1,* , T. Gotoh1, K. Sugawara1
Affiliation
- Department of Applied Physics, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
Abstract
Characteristics of amorphous-to-crystalline structural changes obtained using an electrical atomic force microscope and a scanning tunneling microscope have been investigated with simple models. A minimal mark size of ~10 nm is consistent with an empirical thermodynamic model. The mark size increases with electrical power and film thickness, which can be accounted for using thermal and crystal-growth models..
Keywords
Nano-scale phase change, Ge-Sb-Te, Crystallization, Scanning tunneling microscope, Atomic force microscope.
Submitted at: Sept. 24, 2004
Accepted at: Dec. 6, 2004
Citation
K. Tanaka, T. Gotoh, K. Sugawara, NANO-SCALE PHASE CHANGES IN Ge-Sb-Te FILMS WITH ELECTRICAL SCANNING PROBE MICROSCOPES, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 4, pp. 1133-1140 (2004)
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