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New analytical HFET I – V characteristics model

R. M. ŠAŠIC1, P. M. LUKIC2,* , R. M. RAMOVIC3

Affiliation

  1. Faculty of Technology and Metallurgy, Karnegijeva 4, Belgrade, Serbia and Montenegro
  2. Faculty of Mechanical Engineering, Kraljice Marije 16, Belgrade, Serbia and Montenegro
  3. Faculty of Electrical Engineering, Bulevar kralja Aleksandra 73, Belgrade, Serbia and Montenegro

Abstract

In this paper the new analytical model of current – voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET physics. In the new model, most of the parameters have a clear, physical meaning. Presented model includes HFET carrier mobility model, as well as HFET electric field model. Temperature influence is included in the model too. This model is suitable for the design and simulation of different types of HFETs. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoreticaly obtained results, available in literature..

Keywords

I – V characteristics model, Heterostructure Field Effect Transistor (HFET).

Submitted at: Dec. 12, 2005
Accepted at: Jan. 26, 2006

Citation

R. M. ŠAŠIC, P. M. LUKIC, R. M. RAMOVIC, New analytical HFET I – V characteristics model, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 1, pp. 324-328 (2006)