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Novel approach to the investigation of carriers’ concentration in various semiconductor structures

RIFAT M. RAMOVIĆ1,* , RAJKO M. ŠAŠIĆ2, PETAR M. LUKIĆ3

Affiliation

  1. Faculty of Electrical Engineering, Bulevar kralja Aleksandra 73, Belgrade, Serbia
  2. Faculty of Technology and Metallurgy, Karnegijeva 4, Belgrade, Serbia
  3. Faculty of Mechanical Engineering, Kraljice Marije 16, Belgrade, Serbia

Abstract

In this paper modern approach to the investigation of carriers’ concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic..

Keywords

Carriers' concentration, Quantum well, Quantum correction.

Submitted at: June 12, 2006
Accepted at: July 20, 2006

Citation

RIFAT M. RAMOVIĆ, RAJKO M. ŠAŠIĆ, PETAR M. LUKIĆ, Novel approach to the investigation of carriers’ concentration in various semiconductor structures, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 4, pp. 1418-1423 (2006)