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NUMERICAL SIMULATION OF THE TIME-RESOLVED SURFACE PHOTOVOLTAGE AT Si-SiO2 INTERFACES

K. Kirilov1,* , K. Germanova1, V. Donchev1, Tzv. Ivanov1

Affiliation

  1. Faculty of Physics, Sofia University, 5. blvd. J. Bourchier, 1164 Sofia, Bulgaria

Abstract

We present a simple original algorithm for numerical simulation of super-bandgap SPV transients in semiconductors. It is applied to a p-Si/SiO2 interface with quasi-continuously distributed non-interacting interface states. The simulated SPV time dependence is compared with experimental results, and a reasonable agreement is found..

Keywords

Surface photovoltage, Time-resolved, Numerical simulation, Interface states.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

K. Kirilov, K. Germanova, V. Donchev, Tzv. Ivanov, NUMERICAL SIMULATION OF THE TIME-RESOLVED SURFACE PHOTOVOLTAGE AT Si-SiO2 INTERFACES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 529-532 (2005)