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NUMERICAL STUDY OF THE GROWTH CONDITIONS IN A MOCVD REACTOR: APPLICATION TO THE EPITAXIAL GROWTH OF CdTe

R. Tena-Zaera1, I. Mora-Seró1, C. Martinez-Tomas1, V. Muñoz-Sanjosé1,*

Affiliation

  1. Dept. Física Aplicada and ICMUV, Universitat de València, C/ Dr. Moliner 50, 46100 Burjassot, Spain

Abstract

A 2-D model to simulate the gas flow in a horizontal MOCVD reactor has been developed. This model takes into account the conservation equations coupled with heat transfer and mass transport of the chemical species. For the mathematical solution a commercial solver, that can be run in a conventional personal computer, has been used. The influence of different parameters such as total flow, partial pressures of precursors, reactor pressure and substrate temperature on the gas flow and growth rate has been studied. Diisopropyltelluride (DIPTe) and dimethylcadmium (DMCd) have been used as precursors and H2 as carrier gas. The capabilities of the used model for the numerical study in a conventional research or production laboratory will be shown. The main goal of this paper is both to offer a valuable tool for the numerical simulation of the MOCVD system and to suggest some practical reflections for the MOCVD experimental grower in order to facilitate the optimization process in a reduced time..

Keywords

CdTe, MOCVD, Numerical simulation.

Submitted at: Nov. 28, 2002
Accepted at: March 12, 2003

Citation

R. Tena-Zaera, I. Mora-Seró, C. Martinez-Tomas, V. Muñoz-Sanjosé, NUMERICAL STUDY OF THE GROWTH CONDITIONS IN A MOCVD REACTOR: APPLICATION TO THE EPITAXIAL GROWTH OF CdTe, Journal of Optoelectronics and Advanced Materials Vol. 5, Iss. 1, pp. 97-108 (2003)