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ON THE THEORETICAL DESCRIPTION OF PHOTOLUMINESCENCE IN DISORDERED QUANTUM STRUCTURES

O. Rubel1, S. D. Baranovskii1,* , K. Hantke1, J. D. Heber1, J. Koch1, P. Thomas1, J. M. Marshall2, W. Stolz1, W. W. Rühle1

Affiliation

  1. Department of Physics and Material Sciences Center, Philipps University Marburg, D-35032 Marburg, Germany
  2. School of Engineering (Emeritus Professor), University of Wales Swansea, Singleton Park, Swansea SA2 8PP, UK

Abstract

A theory is suggested for the description of luminescence in semiconductor structures, with the essential role of localized states caused by disorder. The theory is based on the set of rate equations. In contrast to most previous theoretical studies, electrons and holes are treated not in the form of excitons but rather as independent species. Theoretical results are compared with new experimental data for the time-resolved photoluminescence in GaInNAs/GaAs quantum wells..

Keywords

Alloy quantum wells, Photoluminescence, Localized states, Disorder.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, W. W. Rühle, ON THE THEORETICAL DESCRIPTION OF PHOTOLUMINESCENCE IN DISORDERED QUANTUM STRUCTURES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 115-120 (2005)