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On the use of GaAs native oxide to characterize MISM and MISIM switching devices

K. F. YARN1,*

Affiliation

  1. Department of Electronic Engineering, Far East College, Hsin-Shih, Tainan 744, Taiwan, ROC

Abstract

Two-state bistable switching phenomena in both metal-native oxide-semiconductor-metal (MISM) and metal-native oxide-semiconductor-native oxide-metal (MISIM) structures have been achieved by experimental predictions for the first time, where the GaAs native oxides are formed by the liquid phase chemical enhanced oxidation (LPCEO) technique. Bidirectional two-state switching (DIAC-like) and three-terminal operation are also shown in the optical sensitive MISIM structure. Typical switching voltages for GaAs MISM and MISIM switching devices under 4 nm-thick native oxides are 7 V and 15 V, respectively. The corresponding voltage control efficiencies for MISM and MISIM switching devices are also as high as 3.944 and 7.04..

Keywords

GaAsMISM switching device, Liquid phase chemical enhanced oxidation, Optical sensitivity MISIM structure.

Submitted at: Dec. 5, 2005
Accepted at: Jan. 26, 2006

Citation

K. F. YARN, On the use of GaAs native oxide to characterize MISM and MISIM switching devices, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 1, pp. 383-386 (2006)