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OPTICAL AND PHOTOELECTRIC PROPERTIES OF PROPOLIS-LAYERED SEMICONDUCTOR (p-InSe) HETEROJUNCTION

S. I. Drapak1,* , A. P. Bakhtinov1, I. T. Drapak2, Z. D. Kovalyuk1, M. V. Tovarnitsky1

Affiliation

  1. Frantsevich Institute of Material Sciences Problems, the National Academy of Sciences of Ukraine, Chernivtsi Department, 5, Iryna Vilde Str., 58001 Chernivtsi, Ukraine
  2. Chernivtsi National University, Physical Department, 2, Kotsyubinski Str., 58012 Chernivtsi, Ukraine

Abstract

The spectra of optical absorption, photoluminescence in the spectral range 0.2 to 10 µm for thin propolis (an organic entity of biological nature) layers deposited onto various substrates, and spectral distribution of photosensitivity of propolis-p-InSe heterocontacts are investigated. In the optical absorption spectra measured at room temperature we have found an abrupt optical absorption edge (3.0÷3.25 eV) in the short-wavelength range and some typical absorption bands in the near IR range. In the room temperature photoluminescence spectra a maximum at 2.88÷2.96 eV was observed. It is shown that some of these structures have photosensitivity in the infrared region of the electromagnetic spectrum at hν ≤ 1.2 eV..

Keywords

InSe, Intrinsic oxide, Heterojunction, Photoelectrical properties.

Submitted at: June 6, 2004
Accepted at: March 23, 2005

Citation

S. I. Drapak, A. P. Bakhtinov, I. T. Drapak, Z. D. Kovalyuk, M. V. Tovarnitsky, OPTICAL AND PHOTOELECTRIC PROPERTIES OF PROPOLIS-LAYERED SEMICONDUCTOR (p-InSe) HETEROJUNCTION, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 801-804 (2005)