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Optical and photoelectrical properties of GaS and CdTe thin FILMS, components of GaS/CdTe heterojunctions

E. CUCULESCU1, I. EVTODIEV1, M. CARAMAN1, M. RUSU2,*

Affiliation

  1. State University of Moldova, 60, A. Mateevici Str., Kishinev, MD-2009, Republic of Moldova
  2. “Al. I. Cuza” University, 11 Carol I Bd., 700506 Iasi, Romania

Abstract

In the paper, experimental results concerning the absorption and photosensibility spectral dependence of GaS and CdTe thin film components of GaS/CdTe heterojunctions are presented. GaS films (d = 0.06 µm – 2.8 µm) were deposited onto ITO substrate by laser light pulses. CdTe films (d = 3.6 µm) were deposited onto GaS films by close-spaced sublimation technique. At the fundamental absorption edge, the absorption coefficient of CdTe layers increases of five orders of magnitude in a narrow 40 – 100 meV energy range, up to 4 104cm-1. At room temperature, the energy band of GaS/CdTe heterojunctions photosensitivity is 1.45 eV-2.75 eV, the photocurrent having a constant value up to 2.0 eV photon energy..

Keywords

Gallium sulphide, Cadmium telluride, Heterojunction, Thin film, Optical absorption, Photoelectrical properties.

Submitted at: March 15, 2006
Accepted at: May 18, 2006

Citation

E. CUCULESCU, I. EVTODIEV, M. CARAMAN, M. RUSU, Optical and photoelectrical properties of GaS and CdTe thin FILMS, components of GaS/CdTe heterojunctions, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 3, pp. 1077-1081 (2006)