"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

OPTICAL AND TRANSPORT PROPERTIES OF UNDOPED AND Al-, Ga- AND In-DOPED ZnO THIN FILMS

L.-S. Hsu1,* , C. S. Yeh2, C. C. Kuo3, B. R. Huang4, S. Dhard5

Affiliation

  1. Division of Physical Sciences, University of Guam, Guam 96923, USA
  2. Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Touliu, Taiwan, R.O.C.
  3. Department of Industrial Education and Technology, National Changhua University of Education, Changhua, Taiwan, R.O.C.
  4. Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu, Taiwan, R.O.C.
  5. Department of Electronic Science, University of Calcutta, Calcutta-700 009, India

Abstract

Pulsed-laser deposition of undoped and Al-, Ga- and In-doped ZnO thin films is reported. The structure of the films remained unaffected by doping. The effect of doping on the optical and transport properties of the films was investigated. The band gaps, the optical constants, and the electron concentrations of the ZnO films are obtained from the ellipsometry and spectrophotometry data. Blue shift of the band gap due to doping is observed. The Burstein Moss effect is remarked in the Ga- and In-doped ZnO films. The transport data show the increase of conductivity and mobility by doping with Al, Ga, or In. A number of deep levels with energies ranging from 0.75 to 1.14 eV are found in the ZnO films by photoconductivity measurement..

Keywords

ZnO films, Doping by Al, Ga, In, Pulsed laser deposition.

Submitted at: Nov. 9, 2005
Accepted at: Nov. 24, 2005

Citation

L.-S. Hsu, C. S. Yeh, C. C. Kuo, B. R. Huang, S. Dhard, OPTICAL AND TRANSPORT PROPERTIES OF UNDOPED AND Al-, Ga- AND In-DOPED ZnO THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 6, pp. 3039-3046 (2005)