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OPTICAL COATINGS BASED ON NON-CRYSTALLINE FILMS WITH TRANSITION SUBSTRATE-FILM LAYERS: SIMS AND AUGER PROFILES

A. V. Mitsa1,* , I. V. Fekeshgazy2, A. V. Ugrin1

Affiliation

  1. Uzhgorod National University, 54 Voloshyn str. 8800, Uzhgorod, Ukraine
  2. Institute of Physics of Semiconductors, National Academy of Sciences, Ukraine

Abstract

The results of studies by the SIMS and Auger spectroscopy methods of element distribution in a-As2S3 and a-GeS2 films prepared by vacuum evaporation on Si substrates are presented. In a-GeS2 films the extended transition region with dimensions of ~ 30 nm has been observed. The intensity of interference maximum of such slightly inhomogeneous thin films on glassy substrate is higher than the maximum of transmission level of the free glassy substrate..

Keywords

SIMS profile, Auger profile, Chalcogenide films, Transition layer, Inhomogeneous film, SIMS, Auger.

Submitted at: July 4, 2005
Accepted at: July 21, 2005

Citation

A. V. Mitsa, I. V. Fekeshgazy, A. V. Ugrin, OPTICAL COATINGS BASED ON NON-CRYSTALLINE FILMS WITH TRANSITION SUBSTRATE-FILM LAYERS: SIMS AND AUGER PROFILES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1807-1812 (2005)