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OPTICAL GAP AND dc CONDUCTIVITY OF DISORDERED MATERIALS OF (As2Se3)100----x(SbSI)x TYPE

F. Skuban1, S. R. Lukic1, D. M. Petrovic1, I. Savic1,* , Yu. S. Tver’yanovich2

Affiliation

  1. Department of Physics, Faculty of Sciences, University of Novi Sad Trg D. Obradovi a 4, 21000 Novi Sad, Serbia and Montenegro
  2. Department of Chemistry, St. Petersburg State University, Universitetsky pr. 2, Stary Petergof, 198904 St. Petersburg, Russian Federation

Abstract

The paper presents the results of a study of some electrical and optical properties of the five component chalcogenide glasses in the quasi-binary (As2Se3)100-x(SbSI)x system. It is a system with the variable ratio of classical amorphous compound As2Se3 and the molecule of antimony sulfoiodide, SbSI, which in the monocrystal form is characterized as a ferroelectric. The investigated glasses, with various concentration of SbSI, were synthesized from high-purity elemental components by fast cooling from the melt. The amorphous character of the samples was proved using standard optical and X-ray techniques. The temperature dependence of dc conductivity of bulk samples has been investigated in the range from room temperature to the temperature below the glass transition temperature Tg. On the basis of the obtained results, the conductivity activation energy was determined. By studying transparency spectra in a wide range of optical and IR part of the electromagnetic radiation, it was found that the position of the absorption edge depends on the Sb content. Optical band gap and tail-state region were determined..

Keywords

Chalcogenide glasses, dc electrical conductivity, Optical band gap.

Submitted at: May 19, 2005
Accepted at: July 21, 2005

Citation

F. Skuban, S. R. Lukic, D. M. Petrovic, I. Savic, Yu. S. Tver’yanovich, OPTICAL GAP AND dc CONDUCTIVITY OF DISORDERED MATERIALS OF (As2Se3)100----x(SbSI)x TYPE, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1793-1799 (2005)