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Optical properties of bismuth oxide thin films prepared by reactive magnetron sputtering

L. LEONTIE1,*

Affiliation

  1. Faculty of Physics,“Al. I. Cuza” University, 11 Carol I Boulevard, R-700506 Iasi, Romania

Abstract

The optical properties, absorption in the domain 2.50-4.30 eV and the optical functions, n, k, ε1, and ε2, in the range 1.24-6.50 eV, for bismuth oxide films prepared by reactive magnetron sputtering, onto glass and amorphous quartz, at room temperature, have been investigated. Sputtered films (d=0.05-1.80 µm) are preponderantly amorphous, also containing Bi2O3 nanocrystallites, in incipient phase. From optical absorption date the optical band gaps of investigated sputtered films have been determined: Ega=2.68-2.73 eV (amorphous phase) and Ego=3.55 eV (optical direct gap). By studying the dispersion of optical functions, a series of particularities at 3.60 eV, 4.30 eV, 4.80 eV, 5.55 eV, and 6.20 eV are evidenced for sputtered films; they correspond to direct band-to-band transitions in the nanocrystalline Bi2O3..

Keywords

Bismuth oxide, Amorphous thin films, Ellipsometry, UV-VIS absorption, Spectroscopy, Reflection spectroscopy.

Submitted at: Feb. 2, 2005
Accepted at: May 18, 2006

Citation

L. LEONTIE, Optical properties of bismuth oxide thin films prepared by reactive magnetron sputtering, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 3, pp. 1221-1224 (2006)