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OPTICAL PROPERTIES OF Ge20Se80-XBiX THIN FILMS

P. Sharma1,* , M. Vashistha2, I. P. Jain3

Affiliation

  1. Govt. Girls (PG) College, Sri Ganganagar–335001, Rajasthan, India
  2. P.N.D. College, Gajsinghpur, Sri Ganganagar, Rajasthan, India
  3. bCentre for non-conventional energy resources, University of Rajasthan, Jaipur-302004, India

Abstract

In the present work the optical properties of Se substituted by Bi in Ge20Se80 thin films have been studied. Optical reflection and transmission spectra, at normal incidence of Ge20Se80-xBix thin films (x = 0,4,6,8,10,12) were obtained in the range 200 nm – 840 nm. The optical energy gap was estimated from the absorption coefficient values using Tauc’s procedure. It is found that, the optical band gap decreases with increasing bismuth content. The extinction coefficient, refractive index, real and imaginary parts of the dielectric constants have been calculated..

Keywords

Chalcogenides, Optical properties, Band gap, Germanium selenide, Optical constants.

Submitted at: June 14, 2005
Accepted at: Sept. 22, 2005

Citation

P. Sharma, M. Vashistha, I. P. Jain, OPTICAL PROPERTIES OF Ge20Se80-XBiX THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 5, pp. 2647-2654 (2005)