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OPTICAL PROPERTIES OF TERNARY CHALCOGENIDE THIN FILMS WITH SnTe

P. Petkov1,* , V. Vassilev2, T. Petkova3, B. Monchev1, L. Aljihmani2

Affiliation

  1. Department of Physics, Thin Films Technology Lab, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia, Bulgaria
  2. Department of semiconductor materials, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia, Bulgaria
  3. Institute of Electrochemistry and Energy Systems, Bulgarian Academy of Sciences, 10 Acad. G. Bonchev Bl. 10, 1113 Sofia, Bulgaria

Abstract

Thin films of As2Se3 - GeSe2 - SnTe system are investigated. The present investigation is a continuation of our previous study on the possibilities to obtain amorphous thin films by evaporation and condensation in three component systems based on GeSe2 and As2Se3 with SnTe as a third component. The aim is to trace the influence of the third component on the thin film structure and optical absorption. Results from the study show that the optical band gap Eg opt determined both by Tauc plot and Urbach relation reveal a decrease of Eg with increasing SnTe content..

Keywords

As2Se3-GeSe2-SnTe, Amorphous materials, Chalcogenide glasses, Thin film, Optical properties, Band gap structure.

Submitted at: June 1, 2005
Accepted at: July 21, 2005

Citation

P. Petkov, V. Vassilev, T. Petkova, B. Monchev, L. Aljihmani, OPTICAL PROPERTIES OF TERNARY CHALCOGENIDE THIN FILMS WITH SnTe, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1965-1969 (2005)