"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

OPTICAL RECORDING IN SULFUR-SELENIUM LAYERS

M. Popescu1,* , F. Sava1, A. Lorinczi1, R. Savastru2, D. Savastru2, R. Radvan2, I. N. Mihailescu3, G. Socol3

Affiliation

  1. National Institute R&D of Materials Physics, 105bis Atomistilor st., P. O. Box Mg. 7, 77125-Bucharest-Magurele, Romania
  2. National Institute R&D for Optoelectronics, 1 Atomistilor st., P. O. Box MG. 5, 77125-Bucharest-Magurele, Romania
  3. National Institute for Laser, Plasma and Radiation Physics, P. O. Box MG. 36, RO-77125, Bucharest-Magurele

Abstract

Selenium-sulphur layers prepared by warm pressing or deposited by pulsed laser deposition (PLD) on silicon wafers were subjected to laser pulses in order to test the possibility of recording the optical information in these glassy materials. There was demonstrated that the contrast of reflectivity between the irradiated places and the amorphous matrix could be used for storage of information at a reasonable density..

Keywords

Selenium-sulphur, Glassy layers, Optical memory, Pulsed laser recording.

Submitted at: June 2, 2004
Accepted at: June 22, 2004

Citation

M. Popescu, F. Sava, A. Lorinczi, R. Savastru, D. Savastru, R. Radvan, I. N. Mihailescu, G. Socol, OPTICAL RECORDING IN SULFUR-SELENIUM LAYERS, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 3, pp. 883-886 (2004)