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OXYGEN SENSOR BASED ON Ga2O3 FILMS OPERATING AT HIGH TEMPERATURE

C. Baban1,2,* , Y. Toyoda3, M. Ogita3

Affiliation

  1. SVBL of Shizuoka University, 3-5-1, Johoku, Hamamatsu 432-8561, Japan
  2. “Al. I. Cuza” University, Faculty of Physics, Bd. Carol 11, Iasi, Romania
  3. Faculty of Engineering, Shizuoka University 3-5-1, Johoku, Hamamatsu 432-8561, Japan

Abstract

In this paper oxygen sensors based on gallium oxide thin films were analyzed. The gallium oxide thin films have been prepared by rf magnetron sputtering from a powder target using Ar as the sputtering gas. At high temperatures gallium oxide thin films behaves like an n type semiconductor due to an oxygen deficit. The thin films obtained by this method have a higher electrical conductivity due to a higher oxygen vacancy concentration. Two sensors with different geometries were investigated, one using interdigital electrodes and one using a sandwich structure with a mesh type electrode on the top of Ga2O3. The sensing characteristics (stability, sensitivity and response time) of the oxygen sensor were investigated at 1000 oC. Response times of about 10 seconds can be achieved for low oxygen concentrations using first type sensor and about 20 seconds for the second type. The mechanism of oxygen sensing in sputtered gallium oxide films is also discussed..

Keywords

Gallium oxide; Sputtering; Oxygen sensors; Grain boundary.

Submitted at: July 7, 2004
Accepted at: March 23, 2005

Citation

C. Baban, Y. Toyoda, M. Ogita, OXYGEN SENSOR BASED ON Ga2O3 FILMS OPERATING AT HIGH TEMPERATURE, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 891-896 (2005)