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PHASE-CHANGE OVONIC SWITCHING. A MODELLING INVESTIGATION OF THE STRUCTURAL TRANSITION

M. Popescu1,* , F. Sava1, A. Anghel1, A. Lörinczi1, I. Kaban2, W. Hoyer2

Affiliation

  1. National Institute of Materials Physics, Bucharest – Magurele, Romania
  2. Technical University Chemnitz, Institute of Physics, Chemnitz, Germany

Abstract

The transition from amorphous to a more ordered structure was simulated in the frame of a model with disordered As2Te3 layers containing Si and Ge. The layers are interlinked by Si(Ge)-Te-Si(Ge) bonds. By breaking the bonds between layers and elimination of Si and Ge from the disordered layers a new phase is obtained. The Si and Ge remains isolated as dimmers or as small clusters in-between the layers..

Keywords

Chalcogenide, Ovonic, Si-Ge-As-Te, Modelling, Phase transition.

Submitted at: May 21, 2005
Accepted at: July 21, 2005

Citation

M. Popescu, F. Sava, A. Anghel, A. Lörinczi, I. Kaban, W. Hoyer, PHASE-CHANGE OVONIC SWITCHING. A MODELLING INVESTIGATION OF THE STRUCTURAL TRANSITION, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1743-1748 (2005)